| PART |
Description |
Maker |
| IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道，双循环取消选择静态RAM
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc.
Integrated Silicon Solution Inc
|
| IDT71V65803S133BG IDT71V65803S100BQ IDT71V65803S10 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 3.8 ns, PQFP100
256K x 36/ 512K x 18 3.3V Synchronous ZBT SRAMs
RECTIFIER FAST-RECOVERY SINGLE 1A 100V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IS61VF51218A-6.5B3 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| IDT71V67903S80BGI IDT71V67903S75BG IDT71V67903S75B |
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA165
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 7.5 ns, PBGA119
256K X 36, 512K X 18 3.3V Synchronous SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect 512K X 18 CACHE SRAM, 8 ns, PBGA119
|
IDT
Integrated Device Technology, Inc.
|
| GS88118AT-166I GS88118AT-225I GS88118AD-150I GS881 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7 ns, PQFP100
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 6 ns, PQFP100
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165
256K X 32 CACHE SRAM, 7 ns, PBGA165
|
GSI Technology, Inc.
|
| IDT71V67802150BQI IDT71V67802150BG IDT71V67602150P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36/ 512K X 18 3.3V Synchronous SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs/ Single Cycle Deselect
|
Integrated Device Technology, Inc.
|
| MCM63P837ZP200R MCM63P919ZP200R MCM63P837ZP200 MCM |
512K X 18 CACHE SRAM, 3 ns, PBGA119
512K X 18 CACHE SRAM, 2.6 ns, PBGA119
256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
FREESCALE SEMICONDUCTOR INC
Motorola, Inc
|
| CYD36S18V18-167BGXC CYD36S36V18-167BGXC CYD36S36V1 |
FullFlex(TM) Synchronous SDR Dual-Port SRAM; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 2M X 18 DUAL-PORT SRAM, 4 ns, PBGA484
FullFlex(TM) Synchronous SDR Dual Port SRAM; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V; Speed: 167 MHz 1M X 36 DUAL-PORT SRAM, 4 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 1M X 36 DUAL-PORT SRAM, 3.3 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 256K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 4 ns, PBGA256
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 18 DUAL-PORT SRAM, 3.3 ns, PBGA256
FullFlex™ Synchronous SDR Dual Port SRAM 512K X 72 DUAL-PORT SRAM, 3.3 ns, PBGA484
|
Cypress Semiconductor, Corp.
|
| CY7C1360A CY7C1360A-166AC CY7C1360A-225AC CY7C1360 |
256K x 36/512K x 18 Synchronous Pipelined Burst SRAM
|
CYPRESS[Cypress Semiconductor]
|
| GS881E18AD-200 GS881E18AD-200I GS881E18AD-200IT GS |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
|
GSI[GSI Technology]
|
