| PART |
Description |
Maker |
| EMC326SP16AJV-90L EMC326SP16AJV-90LF EMC326SP16AJV |
2Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
|
| HYE18P32161AC HYE18P32161ACL70 HYE18P32161ACL85 HY |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04
32M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| KM23V32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYE18P128160AF-12.5 |
Synchronous Burst CellularRAM (1.5G) CellularRAM
|
infineon
|
| KM23C32000CG |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM23C32005BG |
32M-Bit(4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| K1S32161CC K1S32161CC-FI70 K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| W966D6HBGX7I-TR |
This is a 64M bit CellularRAM?compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
|
Winbond
|
| LTC1591-1I LTC1591-1IN LTC1591-1C LTC1591-1IG LTC1 |
8-Bit, 75 kSPS ADC Serial-Out, On-Chip 12-Ch. Analog Mux, 11 Ch. 20-PDIP
PWR SUP 30W 5V 7.2A OUTPUT
14-Bit and 16-Bit Parallel Low Glitch Multiplying DACs with 4-Quadrant Resistors 14位和16位并低毛刺乘法数模转换器象限电阻
|
Linear Technology Corporation
Linear Technology, Corp.
http://
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| PI3C16226 PI3C16226B |
3.3V, HIGH-BANDWIDTH, 12-BIT TO 24-BIT MUX/DEMUX BUS SWITCH
|
Pericom Semiconductor Corporation
|
