| PART |
Description |
Maker |
| SCD5393 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| SCD5393S |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| KBP2005G KBP210G KBP206G KBP208G |
VOLTAGE 50V ~ 1000V 2 AMP Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| KBP101G KBP104G KBP1005G KBP102G KBP110G |
VOLTAGE 50V ~ 1000V 1.5 AMP Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| RS1505 RS152 |
VOLTAGE 50V ~ 1000V 15.0 AMP Single Phase Bridge Rectifiers
|
SeCoS Halbleitertechnologie...
|
| RS1505G |
VOLTAGE 50V ~ 1000V 15.0 AMP Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie...
|
| KBL6005G KBL601G KBL608G KBL606G KBL604G |
Voltage 50V ~ 1000V, 6.0 Amp Glass Passivated Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| GBJ20005 GBJ2001 |
Voltage 50V ~ 1000V 20.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| GBL005 |
Voltage 50V ~ 1000V 4.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| S1M-K S1J-K |
1A, 200V - 1000V Surface Mount Rectifiers
|
Taiwan Memory Technolog...
Taiwan Semiconductor Co...
|
