| PART |
Description |
Maker |
| IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM
3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT
|
| CYD01S18V CYD01S18V-133BBC CYD01S18V-133BBI CYD01S |
FLEx18⑩ 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
|
Cypress Semiconductor
|
| WED2ZLRSP01S42BC WED2ZLRSP01S50BI WED2ZLRSP01S38BC |
512K x 32/256K x 32 Dual Array Synchronous Pipeline Burst NBL SRAM
|
WEDC[White Electronic Designs Corporation]
|
| IS61VF51218A-6.5B3 |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 512K X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| IDT71V802S133PFI IDT71V802S133BQI IDT71V67602S133P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM2.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 4.2 ns, PQFP100
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36，为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线，单周期取
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 3.8 ns, PQFP100
|
Integrated Device Technology, Inc.
|
| GS881E36AD-150 GS881E36AT-225I GS881E36AT-225T GS8 |
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 6 ns, PQFP100
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 7.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 5.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 32 CACHE SRAM, 5.5 ns, PBGA165
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 256K X 36 CACHE SRAM, 7 ns, PQFP100
512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA165
|
GSI Technology, Inc.
|
| CY7C1356BV25-225 CY7C1354BV25-166 CY7C1354BV25-225 |
256K X 36 ZBT SRAM, 3.2 ns, PBGA119
256K x 36/512K x 18 Pipelined SRAM with NoBLArchitecture 256 × 36/512K × 18流水线的SRAM架构的总线延迟
256K x 36/512K x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor Corp.
Crystek, Corp.
|
| IS61VPS25636A-200TQ2I IS61VPS25636A-250TQI |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 3.1 ns, PQFP100
256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 256K X 36 CACHE SRAM, 2.6 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
| GS881E36 GS881E36T-11.5I GS881E36T-66I GS881E36T-1 |
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology
|
| CY7C1360A CY7C1360A-166AC CY7C1360A-225AC CY7C1360 |
256K x 36/512K x 18 Synchronous Pipelined Burst SRAM
|
CYPRESS[Cypress Semiconductor]
|
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