| PART |
Description |
Maker |
| SI4392DY-T1-E3 SI4392DY SI4392DY-E3 SI4392DY-T1 |
N-Ch. Reduced Qg, Fast Switching WFET; Extr.Low Switching Loss N沟道，低Qg，快速开WFET，超低开关损
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| SUM85N03-08P |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4886DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4872DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7392ADP |
N-Channel Reduced Qg, Fast Switching WFET
|
Vishay Siliconix
|
| SI4384DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI9803DY |
20-V (D-S) Single
P-Channel Reduced Qg Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4368DY SI4368DY-T1-E3 SI4368DY-E3 |
N-Channel Reduced Qg, Fast Switching WFET N沟道减少Qg和快速切换WFET
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| C527RT320-0303 C460RT320-0305 C470RT320-0301 C527R |
Reduced Forward Voltage 3.1 V Typical at 20 mA
|
Cree, Inc
|
| IPL65R165CFD |
Reduced board space consumption
|
Infineon Technologies A...
|
| MA2Z0300AL |
For reduced voltage and temperature compensation
|
Panasonic Semiconductor
|
