| PART |
Description |
Maker |
| DWBW2F4S01 DWBW2F4S11 DWBW3FWS41 DWBW2FTS31 DWBW3F |
Bandsplitters 100 GHz Channel Spacing
|
JDS Uniphase Corporatio...
JDS Uniphase Corporation
|
| ADL5500-EVALZ ADL5500ACBZ-P2 ADL5500ACBZ-P7 |
100 MHz to 6 GHz TruPwr Detector
100 MHz to 6 GHz TruPwr Detector 100 MHz6 GHz TruPwr检测器
|
Analog Devices, Inc.
|
| AGR21125E AGR21125EF AGR21125EU |
125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21090E AGR21090EF AGR21090EU |
90 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR26045EF |
45 W, 2.535 GHz-2.655 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| AGR21030EF |
30 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| PSMN039-100YS |
N-channel LFPAK 100 V 39.5 m惟 standard level MOSFET
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET
N-channel LFPAK 100 V 39.5 m standard level MOSFET 28.1 A, 100 V, 0.0395 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| AD8312 AD8312ACB-REEL7 |
100 MHz to 2.7 GHz, 45 dB RF Log Detector
100 MHz-2.7 GHz, 45 dB RF Log Detector
|
AD[Analog Devices]
|
| AD8354 |
100 MHz-2.7 GHz RF Gain Block
|
Analog Devices
|
