| PART |
Description |
Maker |
| 7812 AD7812 AD7812YRU AD7811 AD7811YN AD7811YR AD7 |
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
10-Bit, 8-Channel, 350 kSPS, Serial A/D Converter
10-Bit, 4-Channel, 350 kSPS, Serial A/D Converter
2.7 V to 5.5 V, 350 kSPS, 10-Bit 4-/8-Channel Sampling ADCs
|
AD[Analog Devices]
|
| R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN
300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN
300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN
1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN
350 A, 2200 V, SILICON, RECTIFIER DIODE
100 A, 200 V, SILICON, RECTIFIER DIODE
200 A, 1500 V, SILICON, RECTIFIER DIODE
1500 A, 1200 V, SILICON, RECTIFIER DIODE
125 A, 800 V, SILICON, RECTIFIER DIODE
150 A, 1200 V, SILICON, RECTIFIER DIODE
400 A, 200 V, SILICON, RECTIFIER DIODE
800 A, 3200 V, SILICON, RECTIFIER DIODE
350 A, 700 V, SILICON, RECTIFIER DIODE
400 A, 900 V, SILICON, RECTIFIER DIODE
100 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1500 V, SILICON, RECTIFIER DIODE
1000 A, 1700 V, SILICON, RECTIFIER DIODE
800 A, 3100 V, SILICON, RECTIFIER DIODE
250 A, 50 V, SILICON, RECTIFIER DIODE
800 A, 3600 V, SILICON, RECTIFIER DIODE
330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc.
POWEREX INC
|
| ENA1198 SCH2408 |
350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET General-Purpose Switching Device Applications
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| SUM09MN20-270 SUM09N20-270 |
N-Channel 200-V (D-S) 175C MOSFET
N-Channel 200-V (D-S) 175 Degree Celcious MOSFET
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| HGTP14N40F3VL |
19 A, 350 V, N-CHANNEL IGBT, TO-220AB
|
HARRIS SEMICONDUCTOR
|
| AD7923BRU EVAL-AD7923CB2 AD7923 |
Four Wall Header; No. of Contacts:60; Pitch Spacing:0.1"; No. of Rows:2; Gender:Header; Body Material:Glass-filled Polyester; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:Through Hole RoHS Compliant: No
4-Channel 200 kSPS 12-Bit ADC with Sequencer in 16-Lead TSSOP
4-Channel, 200 kSPS, 12-Bit ADC with Sequencer in 16-Lead TSSOP
4-Channel 200 kSPS, 12-Bit A/D Converter with Sequencer in 16-Lead TSSOP
|
ADC
AD[Analog Devices]
|
| SI1013R-T1-GE3 |
350 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| FQD7N10L FQD7N10LTF |
N-Channel QFET MOSFET 100 V, 5.8 A, 350 m
|
Fairchild Semiconductor
|
| NGB8206ANT4G NGB8206NT4G NGB8206ANSL3G NGB8206N11 |
Ignition IGBT 20 A, 350 V, N.Channel D2PAK
|
ON Semiconductor
|
| IRFU321 |
3.1 A, 350 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
|
HARRIS SEMICONDUCTOR
|
| SUD19N20-90 |
N-Channel 200-V (D-S) 175 °C MOSFET
N-Channel 200-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
|
