| PART |
Description |
Maker |
| MRFG35005NT1 MRFG35005MT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale (Motorola)
Freescale Semiconductor, Inc
飞思卡尔半导体(中国)有限公司
|
| MRFG35005MT106 08051J0R1BBT 100A101JP500X 100B101J |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| MRFG35002N6AT1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| KPC3023 KPC3020 KPC3021 KPC3022 |
(KPC3020 - KPC3023) Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting)
Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) 光耦合器（这是一镓砷化物红外线发射光耦cosist
|
Kondenshi Corp
KODENSHI[KODENSHI KOREA CORP.]
KODENSHI, CORP.
|
| DMK3379-000-295-011 DMK3248-000-417-001 |
GALLIUM ARSENIDE, KU BAND, MIXER DIODE
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| ATF-10736 ATF-10736-STR ATF-10736-TR1 ATF-10736-TR |
0.5-12 GHz General Purpose Gallium Arsenide FET
0.5?12 GHz General Purpose Gallium Arsenide FET
0.512 GHz General Purpose Gallium Arsenide FET
|
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| GN01068B |
Gallium Arsenide Devices
|
Panasonic
|
