| PART |
Description |
Maker |
| BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
| BD814 BD844 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):8A; Peak Non Repetitive Surge Current, Itsm:100A; Gate Trigger Current Max, Igt:200uA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|02AA
|
Teridian Semiconductor, Corp.
|
| S4060 S4060M S4060D S4060U |
10A sensitive-gate silicon controlled rectifier. Vrrxm, 25V.
10A sensitive-gate silicon controlled rectifier. Vrrxm, 400V.
10A sensitive-gate silicon controlled rectifier. Vrrxm, 600V.
10 AMPERE SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State
ETC[ETC]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC30W-S IRG4BC30WS |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| MAC97A6 MAC97-6 MAC97A4 |
Sensitive Gate Triacs Silicon Bidirectional Thyristors
Thyristor TRIAC 600V 8A 3-Pin TO-92 Tape and Ammo
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conductor P...
|
| IRGPC30UD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| MAC997A6RLRP MAC997A8 MAC997A8RL1 MAC997A8RLRP MAC |
Sensitive Gate Triacs Silicon Bidirectional Thyristors
SENSITIVE GATE TRACS
617SS Series Unipolar Hall-Effect Digital Position Sensor; dual output; 4-pin DIP IC 600 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
|
ONSEMI[ON Semiconductor]
|
| HD-02103AST |
Stick Coupler
SCR Thyristor; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:60V; On-State RMS Current, IT(rms):800mA; Peak Non Repetitive Surge Current, Itsm:8A; Gate Trigger Current Max, Igt:200uA
|
HIROSE[Hirose Electric]
Hirose Electric USA, INC.
|
| BD140-25 BD136-25 BD138-25 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-126
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|126
|
Electronic Theatre Controls, Inc.
|
