| PART |
Description |
Maker |
| 2SC4409 E000949 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4408 E000948 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN6003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
|
TOSHIBA
|
| RN5002 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
|
TOSHIBA
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| 2SA1926 E000581 |
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC2655 E000745 |
From old datasheet system
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD2414SM E001183 2SD2414 |
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SB1641 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| MG300Q2YS61 |
High Power Switching Applications Motor Control Applications
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Semiconductor
|
