| PART |
Description |
Maker |
| NS471Q6 NS471B5 |
RES THNFLM NET 9M OHM/900K OHM/90K OHM/9K OHM/900 OHM/100 OH - Bulk
CNS 471 Decade Divider, Single-In-Line Through Hole Thin Film Resistor Networks (Standard)
|
Vishay Sfernice
|
| 2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| IPW90R340C3 |
15 A, 900 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
INFINEON TECHNOLOGIES AG
|
| J174 J176 J177 J175 |
P-channel silicon field-effect transistors
RESISTOR SILICONE 900 OHM 5W
|
Philips Semiconductors / NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| TMP95FY64 E_030331_95FY64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| MUR1100E MUR190E ON2734 |
1 A, 900 V, SILICON, SIGNAL DIODE
ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| FQPF9N90C FQPF9N90CT FQP9N90C |
N-Channel QFETMOSFET 900V, 8A, 1.4
N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm
|
Fairchild Semiconductor
|
| 2SK2664 |
3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFETs / HVX-II Series (Three Terminal Type)
|
Shindengen
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| IXFX52N30Q IXFX16N90Q |
52 A, 300 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 900 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS CORP
|
| IRFPF40 IRFPF40PBF SIHFPF40 SIHFPF40-E3 IRFPF40-20 |
4.7 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 ROHS COMPLIANT PACKAGE-3
Power MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
|
