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RM20TPM-H02 - Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE

RM20TPM-H02_4356452.PDF Datasheet


Part No.	RM20TPM-H02 RM20TPM-H RM20TPM-M
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE
File Size	35.45K / 3 Page
Maker	Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Homepage	http://www.mitsubishichips.com/
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Full text search : Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE

Product Description search : Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Rectifier Diodes, 800V MEDIUM POWER GENERAL USE INSULATED TYPE

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