| PART |
Description |
Maker |
| ZSPM9015 ZSPM9015ZI1R |
Ultra-Compact, High-Performance, High-Frequency DrMOS Device
|
Integrated Device Techn...
|
| E3385LF E3383LF CFPT-9400 E3384LF |
ULTRA HIGH FREQUENCY TCVCXO
|
ETC
List of Unclassifed Manufacturers
|
| MB506 |
ULTRA HIGH FREQUENCY PRESCALER
|
Fujitsu Limited
FUJITSU[Fujitsu Media Devices Limited]
|
| 0603CS-16NXL 0603CS-10NXL 0603CS-11NXL 0603CS-12NX |
Ultra-small size, exceptional Q and high SRFs make these inductors ideal for high frequency applications where size is at a premium
Chip Inductors ?0603CS (1608)
Ultra-small size, exceptional Q and high SRFs make these inductors ideal for high frequency applications where size is at a premium
|
Coilcraft lnc.
|
| 2450AT07A0100T |
Ultra-Miniature 2.4GHz Chip antenna 0.37mm max Thickness
High Frequency Ceramic Solutions
|
Johanson Technology Inc...
|
| 2SC5436 |
NPN EPITAXIAL SILICON TRANSISTOR ULTRA SUPER MINI MOLD FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
|
NEC
|
| FD1000FV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| FD1000FH-56 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| TC1221 TC1221ECH TC1222 TC1222ECH TC1221ECHTR TC12 |
The TC1221/1222 are CMOS "charge-pump" voltage converters in ultra-small 6-Pin SOT-23A packages. They invert and/or double an input ...
The TC1221/1222 are CMOS "charge-pump" voltage converters in ultra-small 6-Pin SOT-23A packages. They invert and/or double an input voltage which can range from 1.8V to 5.5V. Conversion efficiency is typically 96%. Switching frequency is
From old datasheet system
(TC1222) High Frequency Switched Capacitor Voltage Converters with Shutdown in SOT Packages
(TC1221) High Frequency Switched Capacitor Voltage Converters with Shutdown in SOT Packages
|
MICROCHIP[Microchip Technology]
|
| 15GN01NA |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
