| PART |
Description |
Maker |
| Q62703-Q1088 SFH482-ME7800 SFH480 Q62703-Q1089 Q62 |
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 发动器，红外Lumineszenzdioden 880纳米红外辐射器的GaAIAs 880纳米
GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm 1 ELEMENT, INFRARED LED, 880 nm
From old datasheet system
|
红外LED
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CHA-20NF |
(CHA-20xx) Coaxial Attenuators
|
Component General
|
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| SFH487P Q62703-Q517 |
GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MRF9180R6 |
880 MHz, 170 W, 26 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
| SI1913EDH SI1913EDH08 |
880 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual P-Channel 20-V (D-S) MOSFET
|
Vishay Siliconix
|
| MRF9210R3 |
880 MHz, 200 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
|
Freescale (Motorola)
|
| Q62703Q0517 |
GaAIAs-IR-Lumineszenzdiode (880 nm)
|
OSRAM GmbH
|
| OD-148-C |
0.3556 mm, 1 ELEMENT, INFRARED LED, 880 nm TO-46
|
霍尼韦尔
|
| SFH458012 Q65110A2631 Q65110A2632 SFH4585 |
GaAlAs-IR-Lumineszenzdioden (880 nm) in SMR? Geh?use
|
OSRAM GmbH
|
| RA13H8891MB10 |
880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| OIS-170880 OIS-170880-X-T |
Series 170 - 0805 Standard IR high intensity 880 nm
|
OSA Opto Light GmbH
|
