| PART |
Description |
Maker |
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
| UPD42S16100LLA-A80 UPD42S16100LG3-A80-7JD UPD42S17 |
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
9-Mbit (256K x 32) Pipelined DCD Sync SRAM
9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM
x1 Fast Page Mode DRAM x1快速页面模式的DRAM
|
TOKO, Inc.
EPCOS AG
|
| CAT93C46AJ CAT93C46AJI CAT93C46AJI-2.5 CAT93C46AJ- |
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
72-Mbit QDR™-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
256K (32K x 8) Static RAM
256 Kb (256K x 1) Static RAM
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
Microwire Serial EEPROM 微型导线串行EEPROM
|
Atmel, Corp.
|
| CY7C1170V18-300BZXI CY7C1170V18-300BZC CY7C1170V18 |
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 9 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 512K X 36 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1318BV18-300BZI CY7C1318BV18-167BZI CY7C1916BV |
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.45 ns, PBGA165
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.5 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1317BV18 |
18-Mbit DDR-II SRAM 4-Word Burst Architecture
|
Cypress
|
| CY7C1520V18-167BZC CY7C1520V18-167BZI CY7C1520V18- |
72-Mbit DDR-II SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
| CY7C1418AV18-167BZC CY7C1418AV18-200BZC CY7C1427AV |
36-Mbit DDR-II SRAM 2-Word Burst Architecture
|
CYPRESS[Cypress Semiconductor]
|
