| PART |
Description |
Maker |
| K6F2008T2E |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| EM640FU16E |
256K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM
256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AM29SL400CT100REI AM29SL400CT150WAF AM29SL400CB120 |
CAP 150UF 4V 20% TANT SMD-7343-30 TR-7
M16C Series, 6N4 Group, 3-ch IEBus, 3-phase PWM, CRC 100P6Q-A; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PLQP0100KB-A
High Speed CMOS Logic Octal Inverting Bus Transceiver with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal InvertingTransparent Latch with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic Octal Positive-Edge Triggered D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
High Speed CMOS Logic 12-Stage Binary Counter 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 150 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 110 ns, PDSO48
High Speed CMOS Logic 14-Stage Binary Counter with Oscillator 16-CDIP -55 to 125 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
Xicon Passive Components
Amphenol, Corp.
|
| HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62UF1640 HY62UF16403A HY62UF16403A-I |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HYB514175BJ-50- Q67100-Q2100 HYB514175BJ-55 HYB514 |
256k x 16-Bit EDO-DRAM 256k x 16位江户的DRAM
256k × 16-Bit Dynamic RAM(256k × 16动RAM) 256k × 16位动态随机存储器56k × 16位动态内存）
|
SIEMENS AG
|
| AM29SL400DT90WAD AM29SL400DB100WAF AM29SL400DT90WA |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 256K X 16 FLASH 1.8V PROM, 100 ns, PBGA48
|
Spansion, Inc.
|
| V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能，低功耗，256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| HY62SF1640 HY62SF16403A HY62SF16403A-I HY62SF16403 |
256Kx16bit full CMOS SRAM
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
Hynix Semiconductor
|
