| PART |
Description |
Maker |
| BOE100 |
TO18 Plastic IR Emitter
|
Bedford Opto Technology Ltd.
|
| BOE100LH |
TO18 Plastic IR Emitter Leaded Housing
|
Bedford Opto Technology Ltd.
|
| QSE214 QSE213 QSE213_05 QSE213-05 |
Plastic Silicon Infrared Phototransistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| QSE133 |
PLASTIC SILICON INFRARED PHOTOTRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
|
| QSE122 |
PLASTIC SILICON INFRARED PHOTOTRANSISTOR
|
FAIRCHILD[Fairchild Semiconductor]
|
| QSD723 QSD724 QSD722 |
PLASTIC SILICON PHOTOTRANSISTOR PHOTO TRANSISTOR DETECTOR
|
QT[QT Optoelectronics]
|
| PC853XJ0000F PC852XPJ000F |
1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER ROHS COMPLIANT, PLASTIC, DIP-4
1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER ROHS COMPLIANT, PLASTIC, SMT, DIP-4
DIP 4pin Darlington Phototransistor Ouput,High Collector-emitter Voltage Photocoupler
|
Sharp Electronics, Corp.
Sharp Electrionic Components
|
| 2N2368 |
Bipolar NPN Device in a Hermetically sealed TO18
|
Seme LAB
|
| 2N3007 |
Bipolar NPNP Device in a Hermetically sealed TO18
|
Seme LAB
|
| 2N3011 |
Bipolar NPN Device in a Hermetically sealed TO18
|
Seme LAB
|
