| PART |
Description |
Maker |
| 2SB1151-T60-T 2SB1151L-T60-T 2SB1412-TN3-F-R 2SB14 |
NPN SILICON TRANSISTOR
POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS
HIGH VOLTAGE HIGH SPEED SWITCHING
BIPOLAR POWER GENERAL PURPOSE TRANSISTOR
HIGH VOLTAGE SWITCHING TRANSISTOR
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
|
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| HAT1038R HAT1038RJ HAT1038RD |
Power switching MOSFET
Silicon P Channel Power MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SB1641 |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1759 A5800340 2SC4620 2SC4505 2SA1759T100P |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
From old datasheet system
High-Voltage Switching Transistor (Camera strobes and Telephone, Power supply) (-400V, -0.1A)
High-Coltage Switching Transistor
|
ROHM
|
| 2SD2584 EE08394 |
HIGH POWER SWITCHING APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
|
http://
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ528 2SJ528L 2SJ528S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| GT25Q102 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications
N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4202 E002501 |
HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
