PART |
Description |
Maker |
BB644 Q62702-B0907 Q62702-B0905 |
Silicon Variable Capacitance Diode (For VHF TV-tuners High capacitance ratio Low series inductance)
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SIEMENS[Siemens Semiconductor Group] SIEMENS AG Siemens Group
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BB535 Q62702-B580 |
Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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KA2139 |
Tantalum Molded High Capacitance Capacitor; Capacitance: 10uF; Voltage: 16V; Packaging: Tape & Reel 三通道RGB视频放大 3 CHANNEL R.G.B VIDEO AMPLIFIER
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Samsung Semiconductor Co., Ltd. Samsung Electronic
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PO72-P-1.5C-1A PCN10F PO51-J-1.5 PO51J-T-1 PO51J-T |
Mica Film Capacitor; Capacitance:27pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V RFCO同轴连接 RFCO-AXIAL CONNECTORS RFCO同轴连接
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HIROSE ELECTRIC Co., Ltd. Hirose Electric USA, INC. HIROSE[Hirose Electric]
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HVU306C |
Diodes>Variable Capacitance VARIABLE CAPACITANCE DIODE FOR VHF TUNER
|
Renesas Electronics Corporation
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SA56614-44GW SA56614-20GW SA56614-20 SA56614-29 SA |
Ceramic Multilayer Capacitor; Capacitance:100000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:25V; Dielectric Characteristic:X7R; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount Ceramic Multilayer Capacitor; Capacitance:1200pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor CMOS system reset
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PHILIPS[Philips Semiconductors]
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1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
BB200 BB200_1 |
Low-voltage variable capacitance double diode 70 pF, 18 V, SILICON, VARIABLE CAPACITANCE DIODE, TO-236AB From old datasheet system
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NXP Semiconductors N.V. Philipss Philips Semiconductors
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SA57031-XX SA57031-25 SA57031-26 SA57031-31 SA5703 |
Micropower 150 mA, low-noise, low dropout linear regulator with on/off 微功耗为150 mA,低噪声,低压差线性稳压器的开/ RECTIFIER BRIDGE 25A 800V 300A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY CAP CERAMIC MONO .1UF 50V 10% Ceramic Multilayer Capacitor; Capacitance:22pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Leaded Process Compatible:Yes; Mounting Type:Surface Mount Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:1.2pF; Capacitance Tolerance: 0.5pF; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0603; Termination:SMD RoHS Compliant: Yes Ceramic Multilayer Capacitor; Capacitance:1.5pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor Ceramic Multilayer Capacitor; Capacitance:1pF; Capacitance Tolerance: /- 0.5 pF; Working Voltage, DC:50V; Dielectric Characteristic:C0G/NP0; Package/Case:0603; Series:VJ; Features:Multilayer Ceramic Chip Capacitor
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TE Connectivity, Ltd. NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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HVU355B |
Diodes>Variable Capacitance Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
HVU316 |
Diodes>Variable Capacitance Variable Capacitance Diode for BS/CS tuner
|
Renesas Electronics Corporation
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GMV2114-GM1 GMV2154-GM1 GMV1981-GM1 GMV5007-GM1 GM |
Surface Mount Varactor Diodes C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
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Microsemi Corporation MICROSEMI CORP-LOWELL
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