| PART |
Description |
Maker |
| RN4605 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| RN47A5 |
Transistor Silicon NPN PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications.
TOSHIBA Transistor Silicon NPN PNP Epitaxial Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SB936L-TN3-R 2SB936L-TN3-T 2SB936G-TN3-R 2SB936G- |
SILICON PNP EPITAXIAL PLANAR TYPE
SILICON PNP EPITAXIAL TRANSISTOR
|
Unisonic Technologies
|
| 2SC2206 2SA1254 |
Silicon PNP epitaxial planer type
Silicon NPN epitaxial planer type(For high-frequency amplification)
|
PANASONIC[Panasonic Semiconductor]
|
| RN2306 RN2302 RN2303 RN2304 RN2301 RN2305 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
Transistor Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| UP04314 |
Silicon NPN epitaxial planar type (Tr1) / Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
| XN0A312G |
Silicon NPN epitaxial planar type (Tr1), Silicon PNP epitaxial planar type (Tr2)
|
Panasonic
|
| DMG964010R |
Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2)
|
Panasonic Semiconductor
|
| HN1B01FU HN1B01FUGR |
TRANSISTOR | BJT | PAIR | COMPLEMENTARY | 50V V(BR)CEO | 150MA I(C) | TSOP
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SA1790 2SC4626 |
Silicon PNP epitaxial planer type 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485
FOR HIGH CURRENT APPLICATION SILICON PNP EPITAXIAL TYPE MICRO(FRAME TYPE)
|
Isahaya Electronics Corporation
|
| RT1A3906-T122 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
|
Isahaya Electronics Cor...
Isahaya Electronics Corporation
|
