| PART |
Description |
Maker |
| FDV302PNL |
Digital FET,P-Channel 120 mA, 25 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDG6318P FDG6318PNL |
Dual P-Channel, Digital FET
Dual P-Channel/ Digital FET
|
Fairchild Semiconductor
|
| FDC6302P |
Digital FET, Dual P-Channel
Digital FET/ Dual P-Channel
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FDC6322 FDC6322C |
Dual N & P Channel , Digital FET
Dual N & P Channel / Digital FET
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FDG6302 FDG6302P |
Dual P-Channel/ Digital FET
|
Fairchild Semiconductor
|
| FDG6320CNF40 |
Dual N & P Channel Digital FET
|
Fairchild Semiconductor
|
| PSMN4R4-80PS |
N-channel 80 V, 4.1 m惟 standard level FET
N-channel 80 V, 4.1 m standard level FET 100 A, 80 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 80 V, 4.1 mΩ standard level FET
|
NXP Semiconductors N.V.
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| MTP10N60E7 ON2541 MTP10N60E7-D |
TMOS 7 E-FET™ High Energy Power FET
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
