PART |
Description |
Maker |
W982516BH-75 W982516BH-75I W982516BH-75L |
Industrial SDRAM Low Power SDRAM 4M X 4 BANKS X 16 BIT SDRAM
|
Winbond Electronics
|
CMS4A16LAX-75XX |
128M(8Mx16) Low Power SDRAM
|
FIDELIX
|
EMLS232UA EMLS232UAW-6 EMLS232UAW-6E |
512K x 32 x 4Banks Low Power SDRAM Specificaton
|
Emerging Memory & Logic Solutions Inc
|
EM66932ABG-8G EM66932ABG-7.5G EM66932A EM66932ABG- |
4M x 32 Hand-Held Low Power SDRAM (LPSDRAM)
|
ETRON[Etron Technology, Inc.]
|
V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16 LOW POWER 256Mbit SDRAM 3.3 VOLT/ 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
|
MOSEL-VITELIC Mosel Vitelic, Corp. Mosel Vitelic Corp
|
M65KG512AB6W9 M65KG512AB M65KG512AB6W8 M65KG512AB8 |
512Mbit (4 banks x 8 Mb x 16) 1.8 V supply, DDR low power SDRAM
|
STMicroelectronics
|
MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 |
512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
|
Micron Technology
|
K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
M65KG256AB8W8 |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
EP7312-CV-C EP7311 EP7311-1 |
HIGH-PERFORMANCE LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE HIGH-PERFORMANCE/ LOW-POWER SYSTEM-ON-CHIP WITH SDRAM AND ENHANCED DIGITAL AUDIO INTERFACE From old datasheet system
|
ETC[ETC]
|
W9864G6JH W9864G6JH-7S W9864G6JH-6I W9864G6JH-5 W9 |
1M ?4 BANKS ?16 BITS SDRAM Self Refresh Current: Standard and Low Power, Sequential and Interleave Burst
|
http:// Winbond
|
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|