PART |
Description |
Maker |
AS6C8008 |
512K X 8 BIT LOW POWER 1024K X 8 BIT SUPER LOW POWER CMOS SRAM
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List of Unclassifed Manufacturers List of Unclassifed Manufac...
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EM640FU8E |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
K6F8016R6BFAMILY |
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
K6F8016U6D-XF70 K6F8016U6D K6F8016U6D-FF55 K6F8016 |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY62SF16804B HY62SF16804B-C HY62SF16804B-DFC HY62S |
RES, 33, 1/2W, TKF, 5%, 2010 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM
|
Hynix Semiconductor Inc.
|
KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM(为512k x8位低功耗低电压的CMOS静态RAM)的
|
Samsung Semiconductor Co., Ltd.
|
BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8 Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・¥?????μ?μ?????°????????????μ?μ?????????a?£°???é???o3?o???????) Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor] Brilliance Semiconducto...
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BS616LV8017 BS616LV8017FIP70 BS616LV8017EC BS616LV |
Very Low Power/Voltage CMOS SRAM 512K X 16 bit Asynchronous 8M(512Kx16) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC.
|
W963A6BBN80E |
512K WORD X 16 BIT LOW POWER PSEUDO SRAM 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
|
Winbond Electronics, Corp.
|
27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
AT60142E-DC15SMV AT60142E-DC15SSB AT60142E-DC20M A |
IND 3.3UH 0.2UH THIN-FILM SMD-0805 TR-7 NI/SN-PB RF SWITCH Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 15 ns, DFP36 Rad Hard 512K x 8 Very Low Power CMOS SRAM 512K X 8 STANDARD SRAM, 20 ns, DFP36
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ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|