| PART |
Description |
Maker |
| 70MRCQ24-HL 70MRCQ24-EC 70GRCQ24-HL |
For use with System 50 Style Controllers
RACKS 24 Channel
|
Grayhill, Inc
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| SML100W18 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 72-CHH-1 72-CHH-2 72-CHH-4 72-CHH-6 72-CHE-2 72-CH |
Jumper Bars for Grayhill G5 and Mini Series I/O Racks
|
Grayhill, Inc
|
| C5K1-TPD-XX |
C5 Series Credenza Racks Implement a Totally New Approach
|
List of Unclassifed Man...
|
| HV513WG HV514WG |
8-Channel Serial to Parallel Converter with High Voltage Push-Pull Outputs, POL, Hi-Z, and Short Circuit Detect
High Voltage 8-Channel Serial to Parallel Converters
|
SUTEX[Supertex Inc]
Supertex, Inc
|
| NDH8436 |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 5.8 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| MAX1093ACEG MAX1093AEEG MAX1093AEEGT MAX1093AEEG-T |
250ksps, 3V, 8-/4-Channel, 10-Bit ADCs with 2.5V Reference and Parallel Interface 4-CH 10-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO24
|
Maxim Integrated Products, Inc.
|
| MAX1295 MAX1297 MAX1297BCEGT |
265ksps, 3V, 6-/2-Channel, 12-Bit ADCs with 2.5V Reference and Parallel Interface 2-CH 12-BIT SUCCESSIVE APPROXIMATION ADC, PARALLEL ACCESS, PDSO24
|
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
