| PART |
Description |
Maker |
| FQI3N80 FQB3N80 FQI3N80TU |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB6N80 FQI6N80 FQB6N80TM |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FQI5N80 FQB5N80 FQI5N80TU |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| STP6NB80FP STP6NB80 6218 |
N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP
From old datasheet system
N - CHANNEL 800V - 1.6 - 5.7A - TO-220/TO-220FP PowerMESH TM MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| H45N03E |
N-Channel Enhancement-Mode MOSFET (25V, 45A)
|
HSMC[Hi-Sincerity Mocroelectronics]
|
| FDH45N50F |
N-Channel UniFETTM FRFETMOSFET 500V, 45A, 120m
|
Fairchild Semiconductor
|
| IRFV260 |
TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
|
IRF[International Rectifier]
|
| IRFI260 |
TRANSISTOR N-CHANNEL(Vdss=200V, Rds(on)=0.060ohm, Id=45A*)
|
International Rectifier
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
