| PART |
Description |
Maker |
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| IRFBL3703 |
Synchronous Rectification in High Power High Frequency DC/DC Converters
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| 15GN01CA12 ENA1098A |
VHF to UHF Band High-Frequency Switching, High-Frequency General-Purpose Amplifier Applications
|
Sanyo Semicon Device
|
| FD1000FX-90 |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MPI4040R1-1R5-R MPI4040R1-100-R MPI4040R1-4R7-R MP |
High Frequency, High Current Miniature Power Inductors
|
Cooper Bussmann, Inc.
|
| 33981 PC33981PNA/R2 MC33981 |
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 m?up to 60 kHz)
High-Frequency, High-Current, Self-Protected High-Side Switch (4.0 mз up to 60 kHz) 高频率，大电流，自我保护的高边开关（4.0mз0千赫
High-Frequency/ High-Current/ Self-Protected High-Side Switch (4.0 m up to 60 kHz)
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
Motorola Inc
|
| 2014VS-66NMEB 1212VS-66NMED 2014VS-66NMED 1212VS-6 |
High Frequency, High Current Power Inductors
|
Coilcraft lnc.
|
| 2SA1683 2SC4414 |
High-Frequency General-Purpose Amp/ High-Frequency Power Amp Applications
High-Frequency General-Purpose Amp, High-Frequency Power Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| FD1500BV-90DA |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FD2000DU-120 |
HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
POWEREX[Powerex Power Semiconductors]
|
