| PART |
Description |
Maker |
| UPD442000AGU-DD85X-9KH UPD442000AGU-BB55X-9JH UPD4 |
2M-BIT CMOS STATIC RAM 256K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
| UPD43256BGW-A10X-9JL UPD43256BGW-A10X-9KL UPD43256 |
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
|
NEC[NEC]
|
| UPD4664312F9-BE75X-CR2 UPD4664312F9-B65X-CR2 |
64M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 6400位CMOS移动指明内存分词6位温度范
|
NEC Corp.
PerkinElmer, Inc.
|
| UPD4632312AF9-BE85X-BC2 UPD4632312AF9-BE75X-BC2 UP |
32M-BIT CMOS MOBILE SPECIFIED RAM 2M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION 32兆位CMOS移动指明内存200万字6位温度范
CONNECTOR ACCESSORY
|
NEC, Corp.
NEC Corp.
|
| A122012 A1221 A1222 |
The A1220, A1221, A1222, and A1223 Hall-effect sensor ICs are extremely temperature-stable and stress-resistant devices especially suited for operation over extended temperature ranges to 150°C.
|
Allegro MicroSystems
|
| KM48V8104B KM48V8004B KM48V8004BKL-5 KM48V8004BKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| FW82439TX |
Extended Temperature PCISET System Controller
|
Intel
|
| AT3102S AT3103S AT3101S AT3104S AT310XS |
T3/DS3/E3/STS-1 TRANSFORMERS EXTENDED TEMPERATURE RANGE
|
MPS Industries, Inc.
|
