| PART |
Description |
Maker |
| KX020N06 |
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V)
|
TY Semiconductor Co., L...
|
| SI9410DY |
VDS (V) = 30V ID = 7 A (VGS = 10V) RDS(ON) 0.03 (VGS = 10V)
|
TY Semiconductor Co., L...
|
| FDPF16N50UT FDP16N50U |
R DS(on) = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A
N-Channel UniFETTM Ultra FRFET MOSFET
|
Fairchild Semiconductor
|
| KDD2572 |
rDS(ON) = 45m (Typ.), VGS = 10V, ID = 9A Qg(tot) = 26nC (Typ.), VGS = 10V
|
TY Semiconductor Co., Ltd
|
| FDN5630 |
N-Channel Power Trench MOSFET
VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converters
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| FDD10AN06A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 60V, 50A, 0.0105 Ohms @ VGS = 10V, TO-252/DPAK Package
|
FAIRCHILD SEMICONDUCTOR CORP
|
| NDH853N |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity N Channel Current Id cont. 7.6 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
N-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB34P10TM FQB34P10TM-F085 |
100V P-Channel MOSFET
-33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
|
Fairchild Semiconductor
|
| FDB3682NL |
100V N-Channel Power Trench MOSFET 32A, 0.036 ohm @ Vgs = 10V, TO-263/D2PAK Package 6 A, 100 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
