| PART |
Description |
Maker |
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| 144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
| MIE-514L3 514L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| CQY36N CQY36N08 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| TSTS7100 TSTS710008 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| TSHA6500 TSHA6501 TSHA6502 TSHA6503 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSHA4400 TSHA4401 TSHA440008 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| MIE-304L3 304L3 |
Infrared Emitting Diodes (IRED)
GaAlAs T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| VSLB3940 |
High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH
|
Vishay Siliconix
|
| TSAL620008 TSAL6200 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
