| PART |
Description |
Maker |
| MIE-546A2U 546A2U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (UL Listed)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-524H4 524H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-514L3 514L3 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| CQY36N CQY36N08 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| TSUS5200 TSUS5201 TSUS5202 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| TSUS4400 TSUS440008 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| TSTA7100 TSTA710008 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSHA4400 TSHA4401 TSHA440008 |
Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs
|
Vishay Siliconix
|
| TSTS7300 TSTS730008 |
Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
|
Vishay Siliconix
|
| LNA2603F 0847 LN155 LNA2603FLN155 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
Infrared Light Emitting Diodes
From old datasheet system
GaAs Infrared Light Emitting Diode
|
Panasonic Corporation
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| TSAL7400 TSAL740008 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5300 TSAL5300-MSZ TSAL530008 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
