| PART |
Description |
Maker |
| MIE-546A2U 546A2U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (UL Listed)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| TSAL7200-16 |
High Power Infrared Emitting Diode
|
Vishay Siliconix
|
| MIE-114G1 114G1 |
Infrared Emitting Diodes (IRED)
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-144G1 144G1 |
Infrared Emitting Diodes (IRED)
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-406L3U |
GaAlAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-544H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-304G1 |
GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL5300-FSZ TSAL5300-GSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| MIE-534A4 |
AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL7200 TSAL720009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| VSMY7850X011106 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
