| PART |
Description |
Maker |
| 144A1 MIE-144A1 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER SIDE LOOK PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓大功率角度看包装红外发光二极管
|
Unity Opto Technology Co., Ltd.
|
| TSAL7200-16 |
High Power Infrared Emitting Diode
|
Vishay Siliconix
|
| MIE-556L3U MIE-546L3U 556L3U |
Infrared Emitting Diodes (UL Listed)
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-406L3U |
GaAlAs HIGH POWER TO-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL5300-FSZ TSAL5300-GSZ |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| SKI-FF530 |
Infrared emitting diode which mounted high power 850 nm IR CHIP
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| TSAL6100 TSAL610009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL730009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL6200 TSAL620009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
http://
Vishay Siliconix
|
| VSML3710-GS08 VSML3710-GS18 VSML371009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| VSMY7852X01-GS08 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Techno
|
Vishay Siliconix
|
