| PART |
Description |
Maker |
| TBB1002 TBB1002BMTL-E TBB100206 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1004 |
Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB304MDW-TL-E BB304M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB502M11 BB502MBS-TL-H |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB101MAU-TL-E BB101M |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB503MCS-TL-E BB503M |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
| DTC143EKAT146 |
Built-In Biasing Resistors, R1 = R2 = 4.7kW.
|
Rohm
|
| MN101E03G |
Microcontroller, 128K ROM, 4K RAM From old datasheet system Remote control input discriminant circuit built-in, build-in NTSC video signal processing circuit, built-in 3-line comb filter 8-BIT, MROM, MICROCONTROLLER, PQFP84
|
PANASONIC[Panasonic Semiconductor] Panasonic Corporation Panasonic, Corp.
|
| BB302M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Hitachi Semiconductor
|
| BB505C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation.
|