| PART |
Description |
Maker |
| ST |
SuperTan? Wet Tantalum Capacitors with Hermetic Seal, FEATURES: Very High Capacitance, 10 to 1800μF, 25 to 125VDC, -55°C to 125°C, Very Low ESR and High Ripple Current
|
Vishay
|
| XC3S50A-4VQ100C XC3S700A-5FG400C XC3S700A-5FT256C |
Extended Spartan-3A FPGAs, Package: 4VQ100C FPGA, PQFP100
FPGA, 1472 CLBS, 700000 GATES, 280 MHz, PBGA400
FPGA, PBGA256
Extended Spartan-3A FPGAs, Package: 4FGG484C
Extended Spartan-3A FPGAs, Package: 4FT256C
|
Xilinx, Inc.
XILINX INC
|
| HFBR-5908E HFCT-5908E HFBR-0566 |
622 Mbit/s MMF (500m) SFF Transceiver for SONET/SDH. ATM (OC-12): Extended shield 622兆位/ s的SONET的人造纤维（500）准系统收发 SDH的。自动柜员机（的OC - 12）：扩展屏蔽
622 Mbit/s SMF (15km) SFF Transciever for SONET/SDH. ATM (OC-12): Extended shield
HFBR-0566 · Evaluation Kit for MT-RJ 622 Mb/s Multimode and Singlemode ATM Applications
HFCT-5908E · 622 Mbit/s SMF (15km) SFF Transciever for SONET/SDH, ATM (OC-12): Extended shield
HFBR-5908E · 622 Mbit/s MMF (500m) SFF Transceiver for SONET/SDH, ATM (OC-12): Extended shield
|
Avago Technologies, Ltd.
Agilent (Hewlett-Packard)
|
| KM48V8104C KM48V8004C KM48V8104CK-45 KM48V8104CKL- |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| HCMS-235 HCMS-2351 HCMS-2353 HCMS-235X |
HCMS-2351 · CMOS Extended Temperature Range 5x7 Alphanumeric Display
CMOS Extended Temperature Range 5 x 7 Alphanumeric Display
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| Y1183150K000A0L Y1183150K000A1L Y1183150K000A9L Y1 |
Ultra High Precision Bulk Metal㈢ Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal? Z-Foil Extended Value Range Resistor
Ultra High Precision Bulk Metal垄莽 Z-Foil Extended Value Range Resistor
|
Vishay Siliconix
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| SE051C106KAR SE035C475KAR SE043C106KAR |
Extended Commercial Radial Range
|
AVX Corporation
|
| HY514264B |
256K x 16 Extended Data Out Mode
|
Hynix Semiconductor
|
| SD452-500-0853H |
MCX EXTENDED RIGHT ANGLE PLUG
|
Winchester Electronics Corporation
|
