| PART |
Description |
Maker |
| R1LV0816ASD-5SI R1LV0816ASD-7SI |
8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)
|
Renesas Electronics Corporation
|
| I1LV3216ISD-5SI I1LV3216ISD-7SI R1LV3216RSD-5S R1L |
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0108ESP-5SIB0 R1LV0108ESP-5SIS0 R1LV0108ESP-5S |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0808ASB-7SI R1LV0808ASB-5SI |
8Mb Advanced LPSRAM (1024k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0816ASB-5SI R1LV0816ASB-7SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
| 9864AASA W9864AASA |
64MB (8M x 64) SDRAM SO-DIMM MODULE(64MB (8M x 64)小型双列直插同步动态RAM模块)
From old datasheet system
|
Winbond Electronics Corp
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| TE28F160B3B120 TE28F160B3-B120 TE28F160B3B150 TE28 |
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
|
INTEL[Intel Corporation]
|
| MR27V1652D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI
|
| MSM27C452CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| MR27V852E MR27V852ERA MR27V852EJA |
524,288 Word X 16 - Bit or 1,048,576 - Word X 8 - Bit 8 - Word x 16-Bit or 16 - Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| M40Z300W 5679 |
NVRAM CONTROLLER for up to EIGHT LPSRAM
From old datasheet system
|
STMicro
|
