| PART |
Description |
Maker |
| HSG2005 HSG2005TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|
| SGA6589Z |
DC to 3500MHz, CASCADABLE LOW NOISE, HIGH GAIN SiGe HBT
|
RF Micro Devices
|
| CGA-3318 CGA-3318Z |
Dual CATV Broadband High Linearity SiGe HBT Amplifier
|
SIRENZA MICRODEVICES
|
| SGA-9089Z |
HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR
|
RF Micro Devices
|
| NESG2101M16-T3-A |
NPN SiGe HIGH FREQUENCY TRANSISTOR
|
California Eastern Laboratories
|
| HA31005ANP HA31005ANPTL-E |
SiGe MMIC High Frequency Power Amplifier
|
Renesas Electronics Corporation
|
| NESG2021M16-T3-A NESG2021M16 NESG2021M16-T3 |
NECs NPN SiGe HIGH FREQUENCY TRANSISTOR
|
CALMIRCO[California Micro Devices Corp]
|
| MSG36E41 |
SiGe HBT type
|
Panasonic Semiconductor
|
| 2SC4258 2SC425810 |
FOR HIGH FREQUENCY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| SGA2163Z SGA2163ZPCK1 SGA2163ZSQ |
DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
|
RF Micro Devices
|
| MSG43004 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
