| PART |
Description |
Maker |
| 1214-30 |
30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 2SC4637LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/15mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| SDA312G SDA312A SDA312B SDA312C SDA312D SDA312E SD |
10 AMPS 5 usec STANDARD RECOVERY 3 PHASE BRIDGE ASSY
|
SSDI[Solid States Devices, Inc]
|
| SDR10M SDR10A SDR10B SDR10D SDR10G SDR10J SDR10K |
10 AMPS 950 -1000 VOLTS 5 uSEC STANDARD RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SHM60 SHM40 SHM80 SHM100 SHM15 SHM20 SHM25 SHM30 S |
100-250 mA 1500-10000 VOLTS 5 usec HIGH VOLTAGE RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| MSKD36-12 MSKD36-18 |
Rectifier Modules 200-1800V
|
Microsemi
|
| MSKD100-08 MSKD100-12 MSKD100-16 MSKD100-18 |
Rectifier Modules 200-1800V
|
Microsemi
|
| MSKD70-08 MSKD70-12 |
Rectifier Modules 200-1800V
|
Microsemi
|
| SHM100SMS |
50-250 mA 1500-14000 VOLTS 200 usec HIGH VOLTAGE RECTIFIER 0.1 A, 10000 V, SILICON, SIGNAL DIODE
|
Solid State Devices, Inc.
|
| VG26S17400EJ-5 VG26S17400EJ-6 VG26V17400EJ-5 VG26V |
4,194,304 x 4 - Bit CMOS Dynamic RAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
SOCKET, 56 WAYSOCKET, 56 WAY; Ways, No. of:56; Colour:Grey; Current rating:8.5A; Dielectric strength, VAC:1800V; Resistance, insulation:5000MR; Voltage, working:125V
PLUG, 56 WAYPLUG, 56 WAY; Ways, No. of:56; Colour:Grey; Contacts, No. of:56; Current rating:8.5A; Dielectric strength, VAC:1800V; Poles, No. of:56; Resistance, insulation:5000MR; Voltage, working:125V
4/194/304 x 4 - Bit CMOS Dynamic RAM
|
Vanguard International ...
Vanguard International Semiconductor, Corp.
Vanguard International Semiconductor Corporation
|
