| PART |
Description |
Maker |
| 1N1202C S2580 S25160 1N1199C 1N1203C 1N1204C 1N120 |
Standard Rectifier (trr more than 500ns)
SILICON POWER RECTIFIER
CONN L/FORK INSUL 12-10 AWG #6
|
MICROSEMI[Microsemi Corporation]
|
| MIG20J806HA MIG20J806H EE08617 |
Silicon N-channel integrated IGBT module for high power switching, motor control applications
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的（大功率开关，马达控制应用
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| 2SD1313 E001105 |
NPN TRIPLE DIFFUSED TYPE (HIGH POWER AMPLIFIER, SWITCHING APPLICATIONS)
From old datasheet system
HIGH POWER AMPLIFIER APPLICATIONS HIGH POWER SWITCHING APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| 2SD2584 EE08394 |
HIGH POWER SWITCHING APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)
|
http://
TOSHIBA[Toshiba Semiconductor]
|
| 19007-0032 19005-0001 19005-0015 19007-0029 19007- |
.187X.020 FIQD FLAG EXP. TAPED (BB-2224X 2 mm2, PUSH-ON TERMINAL
Female Disconnect Solderless Terminal; Wire Size (AWG):18-22; Tab Width:0.250"; Insulator Color:Pink; Terminal Insulation:Nylon; Gender:Female 0.8 mm2, PUSH-ON TERMINAL
.250X.032 FEM.FIQD COUPLER TP (C-2265T) 5 mm2, PUSH-ON TERMINAL
CONN .187 FLAG INSUL 14-16AWG 2 mm2, PUSH-ON TERMINAL
.250X.032 FIQD FLAG STRIP(AA-2220Z) RoHS Compliant: Yes 0.8 mm2, PUSH-ON TERMINAL
CONN .250 FLAG INSUL 18-22AWG 0.8 mm2, PUSH-ON TERMINAL
.187X.020 FIQD FLAG (AA-2222) 0.8 mm2, PUSH-ON TERMINAL
.187X.032 FIQD FLAG (BB-2225) 2 mm2, PUSH-ON TERMINAL
CONN .250 MALE INSUL 14-16AWG 2 mm2, TAB TERMINAL
190070020
|
Molex, Inc.
MOLEX INC
|
| HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| HAT2215R HAT2215R-EL-E HAT2215RJ HAT2215RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MP4201 E002500 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| MP441007 MP4410 |
High Power, High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
| FS70UMJ-2 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 100 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
