| PART |
Description |
Maker |
| IS25C64A-3ZLA1 IS25C32A IS25C32A_07 IS25C32A-2GI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS25C64A |
(IS25C32A / IS25C64A) 32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array
15ns programmable electrically erasable logic array
Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
|
ICT
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
http://
|
| R1EX25032ASA00A-15 |
Serial Peripheral Interface 32k EEPROM (4-kword × 8-bit) 64k EEPROM (8-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
| AT24C32D-STUM-T AT24C32D-SSHM-B AT24C32D-SSHM-T AT |
electrically erasable and programmable read only memory
2-Wire Serial Electrically Erasable and Programmable Read-only Memory
|
ATMEL Corporation
|
| BR24L16 BR24L16FJ-W BR24L16FVM-W BR24L16F-W BR24L1 |
2k8 bit electrically erasable PROM
2k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
| 25C640 |
The 25C640 is a 64K-bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI™) compatible serial bus. The bus signals required are a clock input (SCK) plus separate data in (SI) and data
|
Microchip
|
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| XLS2864A |
8K x 8 Electrically Erasable PROM
|
Exel Microelectronics
|
| W27E257P-10 W27E257P-15 W27E257P-12 |
32K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond Electronics
|
| ATF22LV10CQZ-30PC ATF22LV10CQZ-30JI ATF22LV10CQZ-3 |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Atmel, Corp.
|
