| PART |
Description |
Maker |
| RFP-100200N4X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
| RFP-250375N4Z50-2 |
Aluminum Nitride Terminations 25 Watts, 50ohm
|
Anaren Microwave
|
| RFP-250250N6Z50-2 |
Aluminum Nitride Terminations 16 Watts, 50ohm
|
Anaren Microwave
|
| RFP-100200N4Z50-2 |
Aluminum Nitride Terminations 10 Watts, 50ohm
|
Anaren Microwave
|
| AML618L4011 |
Gallium Nitride (GaN)
|
Microsemi
|
| NPT1012 NPT1012-15 |
Gallium Nitride 28V, 25W RF Power Transistor
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MFE211 MFE212 |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
| NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor
Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
List of Unclassifed Man...
|
| RFP-100200-4X50-2 |
Chip Terminations
|
Anaren Microwave
|
| MFE211 MFE212 |
N-CHANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS N沟道双栅氮化硅钝化马鞍山场效应晶体管
From old datasheet system
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
