| PART |
Description |
Maker |
| EMC646SP16JS-45L EMC646SP16JS-45LF EMC646SP16JS-45 |
4Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung Electronic
Samsung semiconductor
|
| K3P7U1000B-YC |
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
|
Samsung semiconductor
|
| K3N7C4000B-DC |
64M-Bit (4Mx16) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
| W966D6HBGX7I-TR |
This is a 64M bit CellularRAM?compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
|
Winbond
|
| S71WS-P S71WS512PC0HF3SR3 S71WS512PC0HF3SR2 S71WS5 |
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM 1.8伏只x16同步写，突发模式CellularRAM的闪存记忆体
1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion Inc.
Spansion, Inc.
|
| K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3 |
2M x 32 Synchronous MASKROM Data Sheet
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MT28C128532W18 |
(MT28C128532W18 / MT28C128564W18) 128Mb Multibank Burst Flash 32Mb ASYNC/PAGE CellularRAM COMBO Memory
|
Micron Technology
|
| KMM5324004BSWG KMM5324004BSW |
4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| HY5DV641622AT-4 HY5DV641622AT-33 HY5DV641622AT-36 |
64M(4Mx16) DDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| KMM372F804BS |
8M x 72 DRAM DIMM with ECC using 4Mx16, 4Mx4 4K Refresh, 3.3V
|
Samsung Electronic
Samsung semiconductor
|
