| PART |
Description |
Maker |
| CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18- |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构（2.0周期读写延迟
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1529JV18-250BZXC CY7C1529JV18-250BZXI CY7C1529 |
8M X 9 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1429JV18-250BZC CY7C1429JV18-250BZI CY7C1429JV |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZ |
4M X 18 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
| CY7C1429AV18 CY7C1422AV18 |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构36-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构（2字突发结36 -兆位的DDR - II二氧化硅的SRAM
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构6-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构（2字突发结36 -兆位的DDR - II二氧化硅的SRAM
|
Cypress Semiconductor Corp.
|
| HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1548V18-300BZC CY7C1548V18-300BZI CY7C1548V18- |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 8M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1277V18-300BZC CY7C1266V18-300BZXC CY7C1266V18 |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1423BV18-200BZI CY7C1423BV18-300BZI CY7C1429BV |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.5 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| HM66AEB18204BP-30 |
36 MBit DDR II SRAM 4 Word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| CY7C1917KV18 CY7C1321KV18-250BZC CY7C1321KV18-250B |
18-Mbit DDR II SRAM Four-Word Burst Architecture
|
Cypress Semiconductor
|
