| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| 2N3441 |
Medium Power Silicon NPN Transistor（Low Saturation Voltage and High Voltage Ratings中功率NPN硅晶体管（低饱和电压，高电压转换速率
|
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| SG2023 SG2023J_DESC SG2023N JAN2003J SG2003 SG2003 |
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system
Driver - Medium Current Array
HIGH VOLTAGE MEDIUM CURRENT DRIVER ARRAYS
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 2N3439CSM4 |
HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
SemeLAB
SEME-LAB[Seme LAB]
|
| 2N6212 2N6213 |
High-voltage, medium-power silicon P-N-P transistor.
|
General Electric Solid State
|
| 2N6422 2N4240 2N6423 2N3583 2N3584 2N3585 2N6420 2 |
COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS
|
Boca Semiconductor Corp...
BOCA[Boca Semiconductor Corporation]
|
| FS3UM-10 FS3UM |
Power MOSFETs: FS Series, Medium Voltage, 500V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| NCP1028 NCP1028P065G NCP1028P100G |
High−Voltage Switcher for Medium Power Offline SMPS Featuring Low Standby Power
|
ON Semiconductor
|
| 2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED MEDIUM POWER NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
HIGH SPEED/ MEDIUM POWER/ NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
Supercapacitor; Capacitance:0.68F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
|
Central Semiconductor Corp
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| ZXTP558L ZXTP558LSTZ |
400V PNP MEDIUM POWER HIGH VOLTAGE TRANSISTOR
|
Diodes Incorporated
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
