| PART |
Description |
Maker |
| HYE18P128160AF-12.5 |
Synchronous Burst CellularRAM (1.5G) CellularRAM
|
infineon
|
| KM23C32000C |
32M-Bit (2Mx16) CMOS Mask ROM(32M浣?2Mx16) CMOS?╄?ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| EMC646SP16JS-45L EMC646SP16JS-45LF EMC646SP16JS-45 |
4Mx16 bit CellularRAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| UPD4632312F9-BE95X-BT3 UPD4632312F9-CE10X-BT3 UPD4 |
Integrated H-bridge with sleep mode
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|77PIN|PLASTIC 伪静态内存| 2MX16 |的CMOS | BGA封装| 77PIN |塑料
|
Amphenol, Corp.
|
| KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| K1S32161CC K1S32161CC-FI70 K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K1S3216BCC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
SAMSUNG Electronics
|
| W966D6HBGX7I-TR |
This is a 64M bit CellularRAM?compliant products, organized as 4M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
|
Winbond
|
| MC100E155FN MC100E155FNR2 MC10E155FN MC10E155FNR2 |
5V ECL 6−Bit 2:1 Mux−Latch 10E SERIES, LOW LEVEL TRIGGERED D LATCH, TRUE OUTPUT, PQCC28
5V ECL 6−Bit 2:1 Mux−Latch
|
ONSEMI[ON Semiconductor]
|
| LTC1591-1I LTC1591-1IN LTC1591-1C LTC1591-1IG LTC1 |
8-Bit, 75 kSPS ADC Serial-Out, On-Chip 12-Ch. Analog Mux, 11 Ch. 20-PDIP
PWR SUP 30W 5V 7.2A OUTPUT
14-Bit and 16-Bit Parallel Low Glitch Multiplying DACs with 4-Quadrant Resistors 14位和16位并低毛刺乘法数模转换器象限电阻
|
Linear Technology Corporation
Linear Technology, Corp.
http://
|
| PI3B16232 |
3.3V, synchronous 16-bit to 32-bit FET demux/mux bus switch
|
Pericom Technology
|
