| PART |
Description |
Maker |
| EM42BM3284LBA-8FE EM421M3284LBA-75FE EM421M3284LBA |
512Mb (4M×4Bank×32) Double DATA RATE SDRAM
512Mb (4M?4Bank?32) Double DATA RATE SDRAM
512Mb (4M】4Bank】32) Double DATA RATE SDRAM
|
http://
List of Unclassifed Manufacturers
ETC[ETC]
Eorex Corporation
|
| EM42AM3284LBC-6F EM42AM3284LBC-6FE EM42AM3284LBC-7 |
512Mb (4M×4Bank×32) Double DATA RATE SDRAM
|
Eorex Corporation
|
| EM42AM1684RTA-5FE EM42AM1684RTA-75FE EM42AM1684RTA |
512Mb (8M×4Bank×16) Double DATA RATE SDRAM
512Mb (8M】4Bank】16) Double DATA RATE SDRAM
|
Eorex Corporation
|
| EM42AM1684LBA-75FE EM42AM1684LBA-7FE EM42AM1684LBA |
512Mb (8M?4Bank?16) Double DATA RATE SDRAM
512Mb (8M×4Bank×16) Double DATA RATE SDRAM
512Mb (8M×4Bank×16) Double DATA RATE SDRAM
|
Eorex Corporation
http://
|
| HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402
512Mb (32M x 16) PC133 2-2-2 Available Q402
512Mb (32M x 16) PC133 3-3-3 Available Q402
128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| HFDOM40B-064S2 HFDOM40B-064S1 HFDOM40B-064SX HFDOM |
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式.3 / 5.0V工作
40Pin Flash Disk Module Min.8MB ~ Max.512MB, True IDE Interface Mode, 3.3V / 5.0V Operating 40Pin盘模块Min.8MBMax.512MB，真正的IDE接口模式3.3 / 5.0V工作
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
| W3EG6462S403D3 |
512MB - 2x32Mx64 DDR SDRAM UNBUFFERED 512MB 2x32Mx64 DDR SDRAM内存缓冲
|
NanoAmp Solutions, Inc.
|
| NX3L2467 NX3L2467HR NX3L2467GU NX3L2467PW |
Dual low-ohmic double-pole double-throw analog switch
|
NXP Semiconductors
|
| 1300940220 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
| 1300940223 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
| 1300940228 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
