PART |
Description |
Maker |
LD242 LD242-2 LD242-3 LD242E7800 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH40912 Q62702P1002 Q62702P0860 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
SFH4205 |
(SFH4200 / SFH4205) Schnelle GaAs-IR-Lumineszenzdiode
|
Infineon Technologies
|
Q68000-A7851 IRL80A IRL80 |
GaAs-Infrarot-Sendediode GaAs Infrared Emitter From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
CF004_06 CF004 CF004-01 CF004-02 CF004-03 |
GaAs Pseudomorphic HEMT and MESFET Chips KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Mimix Broadband, Inc. MIMIX[Mimix Broadband]
|
SBB-5089Z SBB-5089 |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫,级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. http:// ETC[ETC]
|
TG2401F |
1.9 GHz Band TX Fronted IC
PHS, Digital Cordless Telecommunication GaAs Linear Integrated Circuit GaAs Monolithic
|
Toshiba Semiconductor
|
TG2006F |
GaAs Linear Integrated Circuit GaAs Monolithic 1.9 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication
|
TOSHIBA
|
MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L,S BAND POWER GaAs FET L /S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FLU17XM |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET L-Band Medium & High Power GaAs FET
|
FUJITSU LTD EUDYNA[Eudyna Devices Inc]
|