| PART |
Description |
Maker |
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| MT48H16M32LF MT48H16M32LFCJ-75 MT48H16M32LFCJ-75IT |
512Mb: 32 Meg x 16, 16 Meg x 32 Mobile SDRAM
|
MICRON[Micron Technology]
|
| MT16D232X |
1 Meg / 2 Meg x 32 DRAM Module
|
Micron Technology
|
| 27C210 27C210I20N 27C210-12A 27C210-12FA 27C210-12 |
0.6-7 V, 1 MEG CMOS EPROM (64Kx16)
1 MEG CMOS EPROM(64K X 16)
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| MT4LDT464AG MT4LDT264AG MT4LDT164AG |
4 Meg x 64 Nonbuffered DRAM DIMMs(4 M x 64无缓冲动态RAM双列直插存储器模
1 Meg x 64 Nonbuffered DRAM DIMMs(1M x 64无缓冲动态RAM双列直插存储器模 1梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
2 Meg x 64 Nonbuffered DRAM DIMMs(2M x 64无缓冲动态RAM双列直插存储器模 2梅格× 64 Nonbuffered内存插槽00万64无缓冲动态RAM的双列直插存储器模块
|
Micron Technology, Inc.
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| MT4C4003J |
1 MEG x 4 DRAM
|
MICRON[Micron Technology]
|
| MT4LC4M4E8DJ |
4 MEG x 4 EDO DRAM
|
Micron Technology
|
| MT5LC128K8D4S13A MT5LC64K16D4S13A |
S13A 1 MEG SRAM DIE
|
Micron Technology, Inc.
|
| 48SD6404RPFK 48SD6404RPFI |
256 Mb SDRAM 16-Meg X 4-Bit X 4-Banks
|
Maxwell Technologies, Inc
|
| 97SD3240 |
1.25Gb SDRAM 8-Meg X 40-Bit X 4-Banks
|
Maxwell Technologies, Inc
|
