| PART |
Description |
Maker |
| M12L16161A08 |
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| T431616B-20S T431616B T431616B-10C T431616B-10S T4 |
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| 325-5M-15 305-5M-15 1595-5M-15 575-5M-15 480-8M-20 |
RIEMEN SYNCHRON HTD L 325MM B 15MM
RIEMEN SYNCHRON HTD L 305MM B 15MM
RIEMEN SYNCHRON HTD L 575MM B 15MM
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 480MM B 30MM
RIEMEN SYNCHRON HTD L 560MM B 200MM
RIEMEN SYNCHRON HTD L 600MM B 200MM
Dual/Triple-Voltage µP Supervisory Circuits
RIEMEN SYNCHRON HTD L 640MM B 200MM
Low-Power Dual-/Triple-Voltage SC70 µP Supervisory Circuits
Low-Noise, Low-Dropout, 150mA Linear Regulators with '2982 Pinout
RIEMEN SYNCHRON HTD L 720MM B 30MM
3-1/2 Digit A/D, BCD, -40C to 85C, 24-PDIP 600mil, TUBE
RIEMEN SYNCHRON HTD L 880MM B 200MM
RIEMEN SYNCHRON HTD L 960MM B 200MM
RIEMEN SYNCHRON HTD L 960MM B 30MM
RIEMEN SYNCHRON HTD L 1040MM B 200MM
RIEMEN SYNCHRON HTD L 450MM B 15MM
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit
2-Wire-Interfaced 8-Bit I/O Port Expander with Reset
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
1.2A Dual MOSFET Drvr, 0C to 70C, 8-PDIP, TUBE
RIEMEN SYNCHRON HTD L 1100MM B 15MM
RIEMEN SYNCHRON HTD L 980MM B 15MM
RIEMEN SYNCHRON HTD L 1800MM B 15MM
RIEMEN SYNCHRON HTD L 1120MM B 30MM
RIEMEN SYNCHRON HTD L 1120MM B 200MM
RIEMEN SYNCHRON HTD L 1200MM B 200MM
RIEMEN SYNCHRON HTD L 1260MM B 200MM
RIEMEN SYNCHRON HTD L 1600MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 200MM
RIEMEN SYNCHRON HTD L 1440MM B 30MM
RIEMEN SYNCHRON HTD L 1040MM B 30MM
RIEMEN SYNCHRON HTD L 1420MM B 15MM
RIEMEN SYNCHRON HTD L 1600MM B 30MM
RIEMEN SYNCHRON HTD L 1270MM B 15MM
RIEMEN SYNCHRON HTD L 1200MM B 30MM
RIEMEN SYNCHRON HTD L 890MM B 15MM 里门的SYNCHRON HTD890MM15毫米
RIEMEN SYNCHRON HTD L 1595MM B 15MM 里门的SYNCHRON HTD595MM5毫米
RIEMEN SYNCHRON HTD L 560MM B 30MM 里门的SYNCHRON HTD560MM0毫米
RIEMEN SYNCHRON HTD L 880MM B 30MM 里门的SYNCHRON HTD80┨乙30毫米
|
TE Connectivity, Ltd.
Amphenol, Corp.
Rubycon, Corp.
|
| M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52D16161A-10TG |
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
|
Elite Semiconductor Memory Technology, Inc.
|
| M12L32162A-5.5BG M12L32162A09 M12L32162A-5.5TG M12 |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52S32162A M52S32162A-10BG M52S32162A-10TG M52S321 |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52D32162A-10BG M52D32162A-10TG M52D32162A-7.5BG M |
1M x 16Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M52L32321A-7.5BG M52L32321A-10BG M52L32321A-6BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
| K4S161622D-TC_L10 K4S161622D-TC_L55 K4S161622D-TC_ |
512K x 16Bit x 2 Banks Synchronous DRAM
|
Samsung semiconductor
|
