| PART |
Description |
Maker |
| CY8C42223-24SXI CY8C42223-24SXIT CY8C42423-24LFXI |
MULTIFUNCTION PERIPHERAL, PDSO8
Power PSoC?/a> Devices
Power PSoC Devices
|
CYPRESS SEMICONDUCTOR CORP
http://
|
| CY8C21123 CY8C2112311 CY8C21123-24SXIT CY8C21323-2 |
PSoC Programmable System-on-Chip Low power at high speed
PSoC(R) Programmable System-on-Chip(TM); Analog PSoC Blocks: 4; Digital PSoC Blocks: 4; Memory Size: 4 KB; Temperature Range: -40 to 85 C MULTIFUNCTION PERIPHERAL, PDSO8
PSoC™ Mixed-Signal Array CY8C21123, CY8C21223, and CY8C21323 MULTIFUNCTION PERIPHERAL, QCC24
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY8C22345 CY8C22345-24SXI |
PSoC Programmable System-on-Chip Low power at high speed
PSoC® Programmable System-on-Chip&trade MULTIFUNCTION PERIPHERAL, PDSO28
|
Cypress Semiconductor, Corp.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CY8C27643-24LFXIT CY8C27643-24LFIT CY8C27443-24SXI |
PSoC Mixed Signal Array MULTIFUNCTION PERIPHERAL, PDIP8
PSoC Mixed Signal Array MULTIFUNCTION PERIPHERAL, PDSO20
PSoC Mixed Signal Array PSoC混合信号阵列
PSoC Mixed Signal Array MULTIFUNCTION PERIPHERAL, PDIP28
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY8C21234 CY8C21434 CY8C21534 CY8C21634-10 |
PSoC Programmable System-on-Chip Low power at high speed
|
Cypress Semiconductor
|
| CY8C29466 CY8C29466-24SXI CY8C29566 CY8C29666 CY8C |
PSoC Programmable System-on-Chip Low power at high speed
|
Cypress Semiconductor
|
| LA6588MC |
Monolithic Linear IC 24V power supply, BTL output linear drive Single-phase Fan Motor IC
|
Sanyo Semicon Device
|
| MICROSMD050F MICROSMD050F-2 |
Specification Status: Released
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| BAS21 BAS21-MR |
PSoC® Mixed-Signal Array CY8C27143, CY8C27243, CY8C27443, CY8C27543, and CY8C27643
General Purpose High Voltage Diode
PSoC® Mixed-Signal Array CY8C27143, CY8C27243, CY8C27443, CY8C27543, and CY8C27643
|
Fairchild Semiconductor
|
| CY8C22213-24SIT CY8C22113-24PI CY8C22113-24SI CY8C |
PSoC Mixed-Signal Controllers : PSoC Mixed-Signal Array
PSoC⑩ Mixed Signal Array
|
Cypress Semiconductor
|
| A4405 |
The A4405 is an automotive power management IC that uses a high frequency constant on-time 5.45 V pre-regulator to supply two internal 5 V linear regulators and a 3.3 V linear DMOS driver.
|
Allegro MicroSystems
|
