| PART |
Description |
Maker |
| CHA3656-QAG CHA3656-QAG-15 |
5.8-17GHz Low Noise Amplifier
|
United Monolithic Semic...
|
| CHA3666-QAG |
5.8-17GHz Low Noise Amplifier
|
United Monolithic Semiconductors
|
| CHA2266-99F_00 CHA2266 |
12.5-17GHz Low-Noise Driver Amplifier
|
UMS[United Monolithic Semiconductors]
|
| HA2-5137883 HA7-5137883 HA-5137_883 HA4-5137883 FN |
DIODE SCHOTTKY DUAL COMMON-CATHODE 30V 350mW 0.38V-vf 200mA-IFM 1mA-IF 0.2uA-IR SOT-23 3K/REEL
60MHz/ Ultra Low Noise/ Precision Operational Amplifier
60MHz, Ultra Low Noise, Precision Operational Amplifier
60MHz Ultra Low Noise Precision Operational Amplifier
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| AM50-0006 AM50-0006PCS AM50-0006PDC AM50-0006TR AM |
1400-2000 MHz, low noise amplifier
Circular Connector; No. of Contacts:128; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:25; Circular Contact Gender:Socket; Circular Shell Style:Box Mount Receptacle RoHS Compliant: No
Low Noise Amplifier 1400 - 2000 MHz
1400-1520 MHz, low noise amplifier
|
MACOM[Tyco Electronics]
MA-Com
|
| CHA2194-99F_00 CHA2194 CHA2194-99F/00 CHA2193-99F0 |
36-44GHz Low Noise Amplifier 36 - 44GHz低噪声放大器
20-30GHz low noise amplifier
|
United Monolithic Semicondu...
United Monolithic Semiconductors GmbH
UMS[United Monolithic Semiconductors]
|
| MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大
GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier
From old datasheet system
MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd.
Agilent(Hewlett-Packard)
Agilent (Hewlett-Packard)
|
| OP-27EP OP-27GZ OP-27 OP-27AJ OP-27AZ OP-27BJ OP-2 |
LOW NOISE, PRECISION OPERATIONAL AMPLIFIER 低噪声，高精度运算放大器
Low Noise, Precision Operational Amplifier; Package: LCC:CER LEADLESS CHIP CARR; No of Pins: 20; Temperature Range: Military OP-AMP, 200 uV OFFSET-MAX, 8 MHz BAND WIDTH, PQCC20
Low Noise, Precision Operational Amplifier; Package: ROUND HEADER/METAL CAN; No of Pins: 8; Temperature Range: Military OP-AMP, 60 uV OFFSET-MAX, 8 MHz BAND WIDTH, MBCY8
4" CONN,COMP.,EMT,DC 低噪声，高精度运算放大器
LOW NOISE PRECISION OPERATIONAL AMPLIFIER
|
Analog Devices, Inc.
Linear Technology, Corp.
AD[Analog Devices]
|
| AD605-EB AD605ACHIPS AD605AR-REEL AD605AR-REEL7 AD |
Accurate, Low Noise, Dual Channel Linear-In-dB Variable Gain Amplifier, Optimized For Any Application Requiring High Performance
Dual, Low Noise, Single-Supply Variable Gain Amplifier
|
http://
Analog Devices, Inc.
ANALOG DEVICES INC
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| AN-940 |
Low Noise Amplifier Selection Guide for Optimal Noise Performance
|
Analog Devices
|
